Posters - Tuesday
| TuP1 | M. Gryglas-Borysiewicz1, A. Kwiatkowski1, J. Przybytek1, S. Butun2, E. Ozbay2, W. Strupiński3, R. Stępniewski1, M. Baj1 (1 Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw, Poland; 2 Nanotechnology Research Center (NANOTAM), Bilkent University, Turkey; 3 Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warsaw, Poland) Weak localization in epitaxial graphene layers grown on (0001) SiC |
| TuP2 | E. Räsänen1, C. A. Rozzi2, S. Pittalis3, and G. Vignale4 (1Department of Physics, Tampere University of Technology, FI-33101 Tampere, Finland; 2CNR - Istituto Nanoscienze, Centro S3, Via Campi 213a, I-41125 Modena, Italy; 3Department of Chemistry, University of California, Irvine, California, USA; 4Dept. of Physics and Astronomy, University of Missouri, Columbia, Missouri, USA) Artificial graphene as a designer Dirac material |
| TuP3 | Diana M. M. Gustin1, Marcos R.S. Tavares1, G.-Q. Hai2, and P. Vasilopoulos3 (1 Centro de Ciencias Naturais e Humanas, Univ. Federal do ABC, 09210-170, S. André, SP, Brazil; 2Instituto de Física de Sao Carlos, Universidade de Sao Paulo, 13560-970, Sao Carlos, SP, Brazil; 3 Department of Physics, Concordia University,7141 Sherbrooke Ouest, Montreal, Canada H4B 1R6) Transmission through silicene quantum barriers |
| TuP4 | Akinobu Kanda, Yosuke Nukui, Hidenori Goto, Hikari Tomori, Youiti Ootuka (Division of Physics and TIMS, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan) Determination of mobility in top and bottom surfaces of multilayer graphene placed on SiO2/Si substrate |
| TuP5 | Oskar Vafek (National High Magnetic Field Lab and FSU, Tallahassee, FL 32310) Electronic multi-criticality in bilayer and trilayer graphene |
| TuP6 | W. Norimatsu 1, K. Hirata1 and M. Kusunoki2 (1Department of Applied Chemistry, Nagoya University, Japan; 2 EcoTopia Science Institute, Nagoya University, Japan) Growth of boron-doped graphene by thermal decomposition of B4C |
| TuP7 | K. Takase, H. Hibino and K. Muraki (NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198, Japan) Splitting of the zero-energy Landau level in epitaxial graphene on SiC |
| TuP8 | Takahiro Morimoto1, and Mikito Koshino2 (1 Condensed Matter Theory Laboratory, RIKEN, Saitama, 351-0198, Japan; 2 Department of Physics, Tohoku University, Sendai, 980-8578, Japan) Emergent Dirac cones and valley Hall states in gated multilayer graphenes |
| TuP9 | T. Honda1, Y. Hatsugai2, H. Aoki3, and T. Kawarabayashi1 (1Department of Physics, Toho University, Funabashi, Japan; 2Institute of Physics, University of Tsukuba, Tsukuba, Japan; 3Department of Physics, University of Tokyo, Hongo, Japan) Landau levels of disordered massless Dirac fermions when the Dirac cones are both shifted and tilted |
| TuP10 | C. Tonnoir 1, C. Chapelier 1, A. Kimouche 2, J. Coraux 2, B. Delsol 3, B. Gilles 3 (1 SPSMS, UMR-E 9001, CEA-INAC/UJF-Grenoble 1, 17 rue des martyrs, F-38054 Grenoble cedex 9; 2 CNRS Grenoble - Institut Néel, 25 rue des Martyrs, BP 166, F-38042 Grenoble cedex 9; 3 Grenoble INP - SIMAP, 1130 rue de la Piscine, BP 75, F-38402 Saint-Martin-d'H?res cedex) A new path for superconducting graphene |
| TuP11 | D. Terasawa 1, A. Fukuda1, Y. Ohno2, and K. Matsumoto2 (1 Department of Physics, Hyogo College of Medicine, Nishinomiya, 663-8501 Japan; 2 The Institute of Scientific and Industrial Research, Osaka Univ., Ibaraki, 567-0047 Japan) Transition from weak localization to strong localization regime in the bilayer graphene |
| TuP12 | Pilkyung Moon1;2 and Mikito Koshino1 (1Department of Physics, Tohoku University, Sendai, 980-8578, Japan; 2School of Computational Sciences, Korea Institute for Advanced Study, 130-722, Republic of Korea) Optical absorption in twisted bilayer graphene |
| TuP13 | A. Iagallo1, S. Tanabe2, S. Roddaro 1;3, M. Takamura2, H. Hibino2, S. Heun1, and F. Beltram1 (1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy; 2NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, Japan; 3Istituto Officina dei Materiali CNR, Laboratorio TASC, Basovizza (TS), Italy) Tuning of quantum interference in top-gated graphene |
| TuP14 | J. Wakabayashi, S. Shiraishi, W. Wang (Department of Physics, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551, Japan) Magnetoresistance of high mobility graphene in parallel magnetic fields |
| TuP15 | S. Masubuchi1, 2, M. Onuki1, M. Arai1, K. Watanabe1, T. Taniguchi1, and T. Machida 1, 2, 4 (1 Institute of Industrial Science, University of Tokyo, Japan; 2 Institute for Nano Quantum Information Electronics, University of Tokyo, Japan; 3 National Institute for Material Science, Japan; 4 PRESTO-JST, Saitama, Japan) Infrared photoresponse of high-mobility graphene in the quantum Hall regime |
| TuP16 | C. Zoth1, P. Olbrich1, P. Vierling1, K. M. Dantscher1, G. V. Budkin2, S. A. Tarasenko2, V. V. Bel'kov2, D. A. Kozlov3, Z. D. Kvon3, N. N. Mikhailov3, S. A. Dvoretsky3, and S. D. Ganichev1 (1 Terahertz Center, University of Regensburg, Regensburg, Germany; 2 A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia; 3 Institute of Semiconductor Physics, Novosibirsk, Russia) Spin-polarized currents of Dirac fermions at cyclotron resonance |
| TuP17 | Mikito Koshino and Yuya Ominato (Department of Physics, Tohoku University, Sendai, Japan) Magnetic field response of graphene nanostructures |
| TuP18 | B. Birkner1, D. Pachniowski1, A. Sandner1, M. Ostler2, T. Seyller3, J. Fabian4, M. Ciorga1, D. Weiss1, and J. Eroms1 (1 Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany; 2 Lehrstuhl für Technische Physik, University of Erlangen-Nürnberg, 91058 Erlangen, Germany; 3 Technische Universität Chemnitz, 09107 Chemnitz, Germany; 4 Institute of Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany) Annealing-induced magnetic moments in epitaxial graphene detected by spin precession measurements |
| TuP19 | J.M.Baranowski1,2, W.Strupinski1, M.Mozdzonek1, K.Grodecki1,2, and P. Osewski1 (1Institute of Electronic Materials Technology, Wolczynska 133, Warsaw, POLAND; 2 Faculty of Physics, University of Warsaw, Hoza 69, Warsaw, POLAND) Electron - phonon couplings and Fano resonances in epitaxial graphene bilayer |
| TuP20 | Weizhe Edward Liu 1, Allan H. MacDonald 2 and Dimitrie Culcer 1,3 (1 ICQD, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, Anhui, China; 2 Department of Physics, The University of Texas at Austin, Austin TX 78712, USA; 3 School of Physics, University of New South Wales, Sydney NSW 2052, Australia) Electron-electron interactions in non-equilibrium bilayer graphene |
| TuP21 | A. Dyrdał1, J. Barnaś1;2 (1Faculty of Physics, Adam Mickiewicz University in Poznań; 2 Institute of Molecular Physics Polish Academy of Sciences, Poznań) Spin Hall effect in graphene with fluctuating Rashba field |
| TuP22 | D. Smirnov, H. Schmidt, and R. J. Haug (Institut für Festkörperphysik, Leibniz Universität Hannover, Germany) Temperature dependence and bipolar interference in graphene monolayer quantum rings |
| TuP23 | P. Dabrowski1, W. Kozlowski2, I. Wlasny2, J. Slawinska2, Z. Klusek2, M. Kopciuszynski3, R. Zdyb3, M. Jalochowski3, J.M. Baranowski1,4, and W. Strupinski1 (1 Institute of Electronic Materials Technology, Wolczynska 133, Warsaw, 01-919, Poland; 2 Department of Solid States Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz, 90-236, Poland; 3 Institute of Physics, M. Curie-Skłodowska University, Place M. Curie-Skłodowskiej 1, Lublin 20-031, Poland; 4 Faculty of Physics, University of Warsaw, Hoza 69, Warsaw, 00-681, Poland) The electronic structure of graphene induced by substrate interaction |
| TuP24 | Pauline Simonet, Clemens Rössler, Tobias Krähenmann, Christian Reichl, Werner Wegscheider, Klaus Ensslin and Thomas Ihn (Solid State Physics Laboratory, ETH Zurich, Switzerland) Graphene on GaAs |
| TuP25 | Joel I-Jan Wang 1, 2, Yu-An Chen2, Kenji Watanabe3, Takashi Taniguchi3, Pablo Jarillo-Herrero2 (1 Harvard School of Engineering and Applied Sciences, Cambridge, MA 02138, USA; 2 Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA; 3 National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan) Superconducting graphene nanodevices in the ballistic transport regime |
| TuP26 | P. S. Alekseev 1, A. P. Dmitriev 1, I. V. Gornyi 1,2 , and V. Yu. Kachorovskii 1 (1 Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia; 2 Institut fur Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany) Magnetoresistance of disordered graphene at high temperatures |
| TuP27 | N. Sule1, K. J. Willis1,2, S. C. Hagness1, and I. Knezevic1 (1University of Wisconsin-Madison, Madison, WI 53706, USA; 2AWR Corporation, 11520 North Port Washington Road, Mequon, WI 53092, USA) Effects of charged impurity clusters on the conductivity of supported graphene |
| TuP28 | A. Gömez-Leon1, P. Delplace2, and G. Platero1 (1Instituto de Ciencia de Materiales, CSIC, Cantoblanco, Madrid E-28049, Spain; 2Département de Physique Théorique, Université de Geneve, CH-1211 Geneve, Switzerland) Manipulating Dirac cones in graphene by periodic ac fields |
| TuP29 | S. Morikawa 1, S. Masubuchi 1,2, M. Onuki 1, K. Watanabe 3, T. Taniguchi 3 and T. Machida 1,2,4 (1 Institute of Industrial Science, University of Tokyo, Tokyo, Japan; 2 Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan; 3 National Institute for Material Science, Tsukuba, Japan; 4 PRESTO-JST, Saitama, Japan) Ballistic transport in graphene p-n junctions |
| TuP30 | Victoria Mazo1, Chia-Wei Huang1, Herbert A. Fertig2, Samuel Carr3 and Efrat Shimshoni1 (1 Bar Ilan University, Israel; 2 Indiana University, USA; 3 University of Kent, UK) Superfluid-insulator transitions of collective helical modes in the zero quantum Hall state of bilayer graphene |
| TuP31 | M. Arai 1, S. Masubuchi 1,2, K. Watanabe 3, T. Taniguchi 3 and T. Machida 1,2,4 (1 Institute of Industrial Science, University of Tokyo, Japan; 2 Institute for Nano Quantum Information Electronics, University of Tokyo, Japan; 3 National Institute for Materials Science, Japan; 4 PRESTO, Japan Science and Technology Agency, Japan) Strong suppression of conductance in dual-gated h-BN/bilayer graphene/h-BN device |
| TuP32 | S. A. Mikhailov (Institute of Physics, University of Augsburg, D-86135 Augsburg, Germany) Spontaneous electric polarization of the graphene lattice |
| TuP33 | Masakazu Yamagishi1, Narii Watase1, Masayuki Hashisaka1, Koji Muraki2, and Toshimasa Fujisawa1 (1 Department of Physics, Tokyo Institute of Technology, Tokyo, Japan; 2 NTT Basic Research Laboratories, NTT Corporation, Atsugi, Japan) Single electron counting of spin-polarized current through a quantum dot |
| TuP34 | Elżbieta Zipper, Marcin Kurpas, and Maciej M. Maśka (Instytut Fizyki, Uniwersytet Śląski, ul. Uniwersytecka 4, 40-007 Katowice) Wave function engineering in quantum dot-ring nanostructures |
| TuP35 | M. A. Rodriguez-Moreno1, L. Meza-Montes2, and A. D. Hernandez1 (1Centro de Investigaciones en Dispositivos Semiconductores, BUAP, Mexico; 2Instituto de Fisica, BUAP, Mexico) Electrical control of single-electron spin using spin-orbit effects in quantum dots |
| TuP36 | Jinkwan Kwoen 1, Katsuyuki Watanabe 2, Yasutomo Ota 2, Satoshi Iwamoto 1, 2 and Yasuhiko Arakawa 1, 2 (1 Institute of Industrial Science, 2 Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan) Single photon emission from an InAs quantum dot in a GaAs nanowire grown on Si substrate |
| TuP37 | K. Shibata 1, H.T. Yuan 2, Y. Iwasa2,3 and K. Hirakawa 1,4 (1INQIE and IIS, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; 2QPEC and Department of Applied Physics, University of Tokyo, Tokyo, 113-8656, Japan; 3Correlated Electron Research Group, RIKEN, Wako 351-0198, Japan; 4CREST-JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan) Large modulation of electronic states in InAs quantum dots by electric-double-layer gating |
| TuP38 | S. Lüker1, K. Gawarecki2, M. Glässl3, D. E. Reiter1, A. Grodecka-Grad4, V.M. Axt3, P. Machnikowski2 and T. Kuhn1 (1Institut für Festkörpertheorie, Universität Münster, Wilhelm-Klemm-Strasse 10, 48149 Münster, Germany; 2Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Poland; 3Theoretische Physik III, Universität Bayreuth, 95440 Bayreuth, Germany; 4QUANTOP, Danish National Research Foundation Center for Quantum Optics, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen O, Denmark) Optically induced exciton generation in quantum dots via adiabatic rapid passage: influence of phonons and detuning |
| TuP39 | Richarj Mondal1, Bhavtosh Bansal1, A. Mandal2, S. Chakrabarti2, and Bipul Pal1 (1 Indian Institute of Science Education and Research Kolkata, Nadia 741252, WB, India; 2 Indian Institute of Technology Bombay, Mumbai 400076, India) Pauli blocking dynamics in optically excited quantum dots: A picosecond excitation-correlation spectroscopic study |
| TuP40 | M. De Luca 1, S. Birindelli 1, A. Zilli 1, A. Polimeni 1, M. Capizzi 1, F. Mura 2, H. A. Fonseka 3, H. H. Tan 3 and C. Jagadish 3 (1 Dipartimento di Fisica, Sapienza Universit? di Roma, Italy; 2 Dipartimento di Scienze di Base e Applicate per l'Ingegneria, Sapienza Universite di Roma, Italy; 3 Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australia) Resonant excitonic effects in the density of states of InP nanowires |
| TuP41 | C. Jarlov1, L. Ferrier1, M. Calic1, P. Gallo1, V. Belykh2, A. Rudra1, B. Dwir1 , N.N. Sibeldin2 and E. Kapon1 (1Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne, CH1015 Lausanne; 2P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia) Observation of Purcell effect with a site-controlled pyramidal quantum dot coupled to a photonic crystal cavity mode |
| TuP42 | Evgeniya Sheremet 1, Raul D. Rodriguez 1, Dmitry Dmitriev 2, Alexander Toropov 2, Alexander Milekhin 2 and Dietrich R.T. Zahn 1 (1 Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany; 2 Institute of Semiconductor Physics, Novosibirsk, Russia) Raman and AFM profiling of quantum dot multilayers |
| TuP43 | J. Pawłowski, S. Bednarek (Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Kraków, Poland) Research on the new mechanism of a spatial separation of a spin density in a two-electron quantum dot |
| TuP44 | Juan I. Climente, Carlos Segarra and Josep Planelles (Dept. de Química Física i Analítica, Universitat Jaume I, Castelló, Spain) Hole spin relaxation in InAs and GaAs quantum dots: the role of Dresselhaus spin-orbit interaction |
| TuP45 | T. Smoleński1, T. Kazimierczuk1, M. Goryca1, T. Jakubczyk1, L. Kłopotowski2, L. Cywiński2, P. Wojnar2, A. Golnik1, and P. Kossacki1 (1Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Poland; 2Institute of Physics, Polish Academy of Sciences, Warsaw, Poland) In-plane radiative recombination channel of a dark exciton in self-assembled quantum dots |
| TuP46 | P. Kaczmarkiewicz1, P. Machnikowski1, T. Kuhn2 (1Institute of Physics, Wrocław University of Technology, 50-370 Wrocław, Poland; 2Institut für Festkörpertheorie, Universität Münster, D-48149 Münster, Germany) Carrier trapping and phonon-assisted relaxation in non-uniform quantum dashes |
| TuP47 | D. Braam, A. Mölleken, G. M. Prinz, M. Geller and A. Lorke (Fakultät für Physik and CENIDE, Universität Duisburg-Essen, Lotharstraße 1, 47057 Duisburg, Germany) Spectral jitter of single CdSe/ZnS nanoparticles: Where is the charge? |
| TuP48 | L. Langer1, S.V. Poltavtsev1,2, I. A. Yugova1,2, D. R. Yakovlev1,3, G. Karczewski4, T. Wojtowicz4, J. Kossut4, I.A. Akimov1,3, and M. Bayer1 (1 Experimentelle Physik 2, Technische Universität Dortmund, 44221 Dortmund, Germany; 2 Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Russia; 3 A.F. Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia; 4 Institute of Physics, Polish Academy of Sciences, PL-02668 Warsaw, Poland) Magnetic-field control of photon echo from the electron-trion system |
| TuP49 | H. Sasakura 1, X. Liu2, S. Odashima2, H. Kumano2, I. Suemune2, and S. Muto 3 (1 Creative Research Institution, Hokkaido University, Sapporo 001-0021, Japan; 2 Reserch Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan; 3Depertment of Applied Physics, Hokkaido University, Sapporo 060-8268, Japan) Fiber-based bidirectional photon detection from a single quantum dot |
| TuP50 | Shaukat A. Khattak1, 2, Manus Hayne1, Luca Seravalli3, GiovannaTrevisi3 and Paola Frigeri3 (1Department of Physics, Lancaster University, Lancaster LAI 4YB, UK; 2Department of Physics, Abdul Wali Khan University Mardan, Pakistan; 3CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma, Italy) Confinement of excitons in strain-engineered InAs/InGaAs/GaAs metamorphic quantum dots |
| TuP51 | Tomasz Kwapiński (Institute of Physics, M. Curie-Skłodowska University, 20-031 Lublin, Poland) Electronic properties of a quantum wire with magnetic impurities |
| TuP52 | Sanjeev Kumar1, Kalarikad Thomas1, Luke Smith3, Michael Pepper1,2, Ian Farrer3, David Ritchie3, Geraint Jones3 and Jonathan Griffiths3 (1 London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, UK; 2 Department of Electrical and Electronic Engineering, University College London, Torrington Place, London WC1E 7JE, UK; 3 Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, UK) Conductance instabilities in a quasi-1D quantum wire |
| TuP53 | Gil-Ho Kim1, Youngreal Kwak1, Ji-Won Byon2, Jeong Min Baik2, Kyung Soo Yi 3 (1 School of Electronic and Electrical Engineer., Sungkyunkwan Univ., Suwon 440-746, Korea; 2 School of Mechanical and Advanced Materials Engineer., UNIST, Ulsan 689-805, Korea; 3 Department of Physics, Pusan National Univ., Busan 609-735, Korea) Transport properties of Au nanoparticle-VO2 nanowire assembly |
| TuP54 | Enrique Montes1, Konstantinos Gkionis1, Ivan Rungger2, Stefano Sanvito2 and Udo Schwingenschlögl1 (1PSE Division, KAUST, Thuwal 23955-6900, Saudi Arabia; 2School of Physics and CRANN, Trinity College, Dublin 2, Ireland) Relation between structural properties and electron transport in Si nanowires |
| TuP55 | F.E.G.Guimaraes, R. A. Caface, H.Arakaki, C.A. de Souza, and Yu.A.Pusep (Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, 13560-970 Sao Carlos, SP, Brazil) Crystal structure and optical characterization of radial heterostructured GaAs/AlGaAs/GaAs nanowires |
| TuP56 | P. Kamyczek1, Z. R. Zytkiewicz2, E. Placzek-Popko1, E. Zielony1, M. Sobanska2, A. Reszka2, K. Klosek2 (1Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland; 2Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland) The growth and micro-Raman characterization of GaN nanorods |
| TuP57 | M. Galicka, R. Buczko, P. Kacman (Institute of Physics PAS, al. Lotników 32/46, 02-668 Warsaw, Poland) First-principles study of doped gaas nanowires |
| TuP58 | Yong-Hee Choi1,2, Junhong Na1, Jae-Sung Kim1, Jong Mok Shin1 and Gyu Tae Kim1 (1School of Electrical Engineering, Korea University, Seoul, 136-701, Korea; 2Process Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd., Hwasung, 445-701, Korea) Electrical characteristics of N2 plasma treatments on SnO2 nanowires FET |
| TuP59 | Masashi Akabori, Tatsuya Murakami, Syoji Yamada (Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa, Japan) In-plane oriented InAs nanowire formation by selective area molecular beam epitaxy on GaAs (211)B substrates |
| TuP60 | C. Rolland1, P. Caroff1;2, X. Wallart1 and R. Leturcq1 (1Institute of Electronics, Microelectronics and Nanotechnology, CNRS - UMR 8520, Departement ISEN, Avenue Poincaré, F-59652 Villeneuve d'Ascq, France; 2Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia) Interesting spatial inhomogeneities in n- and p-doped InAs nanowires grown by gold-seeded molecular beam epitaxy |
| TuP61 | A. Nikolaeva1,2, L. Konopko1,2, A. Tsurkan1, and E. Istrate1 (1 D. Ghitu Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences, Academiei str. 3/3, MD-2028 Chisinau, Republic of Moldova; 2 International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland) Anisotropy and thermoelectric properties pure and Sn- doped Bi nanowires |
| TuP62 | Nikola Pascher, Clemens Rössler, Thomas Ihn , Klaus Ensslin, Christian Reichl and Werner Wegscheider (Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland) Imaging integer and fractional quantum Hall edge states |
| TuP63 | Yang Liu1, S. Hasdemir1, A.L. Graninger1, M. Shayegan1, L.N. Pfeiffer1, K.W. West1, K.W. Baldwin1 and R. Winkler2 (1Department of Electrical Engineering, Princeton University, Princeton, New Jersey, USA; 2Department of Physics, Northern Illinois University, Dekalb, Illinois, USA) Even-denominator v = 1/2 fractional quantum Hall effect in GaAs 2D hole systems |
| TuP64 | S. Tsuda1, D. Terasawa2, S. Mitani1, Minh Hai N.1, A. Fukuda2, and A. Sawada3 (1 Graduate School of Science, Kyoto University, Kyoto, 606-8501 Japan; 2Department of Physics, Hyogo College of Medicine, Nishinomiya, 663-8501 Japan; 3Research Center for Low Temp. and Mat.Sciences, Kyoto University, Kyoto, 606-8502 Japan) Anomalous electric transport induced by dynamic nuclear polarization in the vicinity of v=2/3 quantum Hall state |
| TuP65 | T. Otsuka1,2, Y. Sugihara1, J. Yoneda1, T. Nakajima1,2 and S. Tarucha1,2 (1 Department of Applied Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan; 2 RIKEN Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan) Probing energy relaxation in quantum Hall edge states utilizing quantum point contacts |
| TuP66 | A. A. Greshnov and Y. M. Beltukov (Ioffe Physical-Technical Institute RAS, St. Petersburg, Russia) Theory of the integer quantum Hall transition broadening due to the electron-phonon interaction |
| TuP67 | C. Betthausen1, C. Preis1, P. Giudici1, V. Kolkovsky2, M. Wiater2, G. Karczewski2, B. Piot3, J. Kunc3, M. Potemski3, T. Wojtowicz2, and D. Weiss1 (1Department of Experimental and Applied Physics, Regensburg University, 93040 Regensburg, Germany; 2Institute of Physics, Polish Academy of Sciences, 02668 Warsaw, Poland; 3Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, 38042 Grenoble, France) Fractional quantum Hall effect in a diluted magnetic semiconductor |
| TuP68 | K. Hashimoto 1,2, T. Tomimatsu 2, K. Sato1, and Y. Hirayama 1,2,3 (1 Department of Physics, Tohoku University, Sendai, 980-8578, Japan; 2 JST-ERATO Nuclear Spin Electronics Project, Sendai 980-8578, Japan; 3 WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan) Local detection of nuclear spin resonance in a quantum-Hall-related system |
| TuP69 | Saadi Lamari (Departement de Physique and LESIMS, Faculte des Sciences, Université Ferhat Abbas I , El Bez, Route d'Alger, Setif 19000 DZ Algeria) Theory of spin orbit effects in two-dimensional electron gases |
| TuP70 | V.A. Slipko 1,2 and Y.V. Pershin 1 (1Department of Physics and Astronomy, University of South Carolina, Columbia, SC USA; 2Department of Physics and Technology, V.N. Karazin Kharkiv National University, Kharkiv, Ukraine) Spin relaxation in 2D systems with boundaries |
| TuP71 | T. Andrearczyk1,2, Hanna Terletska2, T. Wojtowicz1, G. Karczewski1 ,T. Dietl1, V. Dobrosavljević2, Dragana Popović2, J. Jaroszynski2 (1Institute of Physics, Polish Academy of Sciences, Warszawa PL 02-668, Poland; 2National High Magnetic Field Laboratory, Tallahassee FL 32310, USA) Intrinsic phase separation in magnetically doped 2DES |
| TuP72 | J. Shiogai1, M. Ciorga2, M. Kohda1, M. Utz2, D. Schuh2, D. Bougeard2, T. Nojima3, J. Nitta1, and D. Weiss2 (1Department of Materials Science, Tohoku University, Sendai, Japan; 2Institute for Experimental and Applied Physics, University of Regensburg, Regensburg, Germany; 3Institute for Materials Research, Tohoku University, Sendai, Japan) Comparison of non-local and three-terminal detection of spin accumulation in (Ga,Mn)As/GaAs spin Esaki diode devices |
| TuP73 | Mariusz Ciorga, Martin Utz, Dieter Schuh, Dominique Bougeard, and Dieter Weiss (Institute for Experimental and Applied Physics, University of Regensburg, Regensburg, Germany) Contact geometry dependent spin-valve signal from spin injection devices with (Ga,Mn)As/GaAs spin Esaki diode contacts |
| TuP74 | K. Korzekwa1;2, M. Kugler3, C. Gradl3, S. Furthmeier3, M. Griesbeck3, M. Hirmer3, D. Schuh3, W. Wegscheider4, C. Schüller3, T. Korn3, T. Kuhn5, P. Machnikowski2 (1Department of Physics, Imperial College London, London SW7 2AZ, UK; 2Institute of Physics, Wrocław University of Technology, 50-370 Wrocław, Poland; 3Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany; 4Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland; 5Institut für Festkörpertheorie, Universität Münster, 48149 Münster, Germany) Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry |
| TuP75 | Saadi Lamari (Departement de Physique and LESIMS, Faculte des Sciences, Université Ferhat Abbas I , El Bez, Route d'Alger, Setif 19000 DZ Algeria) Spin orbit effects in the 2DEG of semiconductor quantum wells |
| TuP76 | Nammee Kim 1,2 , Jinwoo Kim 2 and Heesang Kim 1,2 (1 Department of Physics, Soongsil University, Seoul 156-743, Korea; 2 Institute for Integrative Basic Science, Soongsil University, Seoul 156-743, Korea) Modulation of the spin conductance in a magnetic superlattice |
| TuP77 | Sadashige Matsuo 1, Tomohiro Koyama1, Kensaku Chida1, Masaki Nagata1, Daichi Chiba1, Kensuke Kobayashi1,2, Teruo Ono1, Keith Slevin2, Tomi Ohtsuki3, Cui-zu Chang4, Ke He4, Xu-cun Ma4 and Qi-kun Xue4 (1 Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan; 2 Department of Physics, Osaka University, Toyonaka, Osaka 560-0043, Japan; 3 Department of Physics, Sophia University, Chiyoda-ku,Tokyo 102-8554, Japan; 4 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China) Universal conductance fluctuation in quasi-1D wires of epitaxial Bi2Se3 |
| TuP78 | K. Dybko, M. Szot, Z. Tkaczyk, A. Szczerbakow and T. Story (Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland) Electron transport signatures of bulk band inversion in Pb1-xSnxSe topological crystalline insulators |
| TuP79 | M. Orlita1;2, D. M. Basko3, M. Zholudev4;5, F. Teppe4, W. Knap4, V. Gavrilenko5, N. Mikhailov6, S. Dvoretskii6, P. Neugebauer7, C. Faugeras1, A.-L. Barra1, G. Martinez1, and M. Potemski1 (1Laboratoire National des Champs Magnétiques Intenses, CNRS, Grenoble, France; 2Charles University, Faculty of Mathematics and Physics, Praha, Czech Republic; 3Université Grenoble 1/CNRS, LPMMC UMR 5493, Grenoble, France; 4Laboratoire Charles Coulomb,CNRS & Université Montpellier II, Montpellier, France; 5Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia; 6A.V. Rzhanov Institute of Semiconductor Physics, RAS, Novosibirsk, Russia; 7Institut für Physikalische Chemie, Universität Stuttgart, Stuttgart, Germany) Observation of 3D massless fermions in a zinc-blende semiconductor at the point of a topological transition |
| TuP80 | Alexander V. Germanenko1, Grigori M. Minkov1,2, Andrey A. Sherstobitov1,2, Olga E. Rut1, Sergey A. Dvoretski3, and Nikolai N. Mikhailov3 (1Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg, Russia; 2Institute of Metal Physics RAS, 620990 Ekaterinburg, Russia; 3Institute of Semiconductor Physics RAS, 630090 Novosibirsk, Russia) Weak antilocalization in HgTe quantum wells with inverted and normal energy spectra |
| TuP81 | M.V. Yakunin 1, A.V. Suslov 2, S.M. Podgornykh 1, A.P. Savelyev 1, S.A. Dvoretsky 3, and N.N. Mikhailov 3 (1 Institute of Metal Physics, Ekaterinburg 620990, Russia; 2 National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA; 3 Institute of Semiconductor Physics, Novosibirsk 630090, Russia) Quantum magnetotransport in the HgTe double quantum well with inverted energy spectrum |
| TuP82 | D. A. Kozlov1, Z. D. Kvon1;2, N. N. Mikhailov1, S. A. Dvoretskiy1 (1A. V. Rzhanov Institute of semiconductor Physics, 630090, Novosibirsk, Russia; 2 Novosibisk State University, 630090, Novosibirsk, Russia) Weak anti-localization in 2D Dirac fermions in CdHgTe/HgTe/CdHgTe quantum well |
| TuP83 | Grigory M. Minkov1;2, Alexander V. Germanenko1, Andrey A. Sherstobitov1;2, Olga E. Rut1, Sergey A. Dvoretski3, and Nikolai N. Mikhailov3 (1Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg, Russia; 2Institute of Metal Physics RAS, 620990 Ekaterinburg, Russia; 3Institute of Semiconductor Physics RAS, 630090 Novosibirsk, Russia) Two-dimensional semimetal in a wide HgTe quantum well: magnetotransport and energy spectrum |
| TuP84 | D. I. Golosov1, I. Shlimak1, A. Butenko1, K.-J. Friedland2, and S. V. Kravchenko3 (1 Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel; 2 Paul-Drude Institut f¨ur Festk¨orperelektronik, Hausvogteiplatz 5-7, 10117, Berlin, Germany; 3 Physics Department, Northeastern University, Boston, MA 02115, USA) 2DEG resistance asymmetry caused by an effective spin injection in a parallel magnetic field |
| TuP85 | I. Shlimak1, A. Butenko1, D. I. Golosov1, K.-J. Friedland2, and S. V. Kravchenko3 (1 Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel; 2 Paul-Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117, Berlin, Germany; 3 Physics Department, Northeastern University, Boston, MA 02115, USA) Influence of spin polarisation on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities |
| TuP86 | A. Go (Faculty of Physics, University of Białystok, Lipowa 41, 15-424 Białystok, Poland) Modelling of bcc multicomponent low dimensional structures composed of transition metals and metalloids |
| TuP87 | O. V. Kibis (Department of Applied and Theoretical Physics, Novosibirsk State Technical University, Novosibirsk 630073, Russia) Light-induced dissipationless electron transport in quantum wells |
| TuP88 | Jesus Inarrea (Escuela Politécnica Superior, Universidad Carlos III, Leganes, Madrid, Spain) Microwave polarization dependence of magnetoresistance oscillations of 2DES |
| TuP89 | D. Q. Wang1, J. C. H. Chen1, O. Klochan1, K. Das Gupta2, D. Reuter3, A.D. Wieck3, D. A. Ritchie2, and A. R. Hamilton1 (1School of Physics, University of New South Wales, Sydney NSW 2052, Australia; 2Cavendish Laboratory, J. J. Thomson Avenue, Cambridge, CB3 OHE, United Kingdom; 3Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany) Influence of surface states on quantum and transport lifetimes in high-quality undoped heterostructures |
| TuP90 | Jill A. Miwa1, Philip Hofmann1, Michelle Y. Simmons2 and Justin W. Wells3 (1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark; 2Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia; 3Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway) Direct band structure measurements of a buried d-layer |
| TuP91 | Ivan A. Dmitriev (Institute for Theoretical Condensed Matter physics, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany;Ioffe Physical Technical Institute, 194021 St. Petersburg, Russia) Theory of radiation-induced zero resistance states in 2D systems |
| TuP92 | I. Karakurt1 and A.J. Dahm2 (1 Department of Physics, Işik University, Şile, Istanbul 34980, Turkey; 2 Department of Physics, Case Western Reserve University, Cleveland, OH 44106-7079, USA) Effect of electron-electron interactions on the magnetoresistivity of a weakly-screened, low-density, two-dimensional electron liquid |
| TuP93 | M. Q. Weng and M. W. Wu (Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China) Microscopic theory for the Doppler velocimetry of spin propagation in semiconductor quantum wells |
| TuP94 | Z. D. Kvon 1,2, D. A. Kozlov 1,2 S. N. Danilov 3, C. Zoth 3, P. Vierling3, S. Stachel3, V. V. Bel'kov 3, and S.D.Ganichev 3 (1 Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090 Russia; 2 Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia; 3Terahertz Center, University of Regensburg, D 93040 Regensburg, Germany) Terahertz induced magnetoresistance oscillations of a high_density and high_mobility two_dimensional electron gas |
| TuP95 | N.T. Bagraev, E.Yu. Danilovskii, D.S. Gets, L.E. Klyachkin , A.M. Malyarenko (Ioffe Physical Technical Institute of the Russian Academy of Sciences, St. Petersburg, Russia) Conductance matrix in silicon nanosandwiches |
| TuP96 | N.T. Bagraev, E.Yu. Danilovsky, D.S. Gets, L.E. Klyachkin, A.A. Kudryavtsev, A.M. Malyarenko (Ioffe Physical-Technical Institute, 194021, St. Petersburg, Russia) Fractional quantum conductance in silicon nanosandwiches |
| TuP97 | S. Ichinokura1, T. Hatano2, K. Nagase2, W. Izumida1 and Y. Hirayama1,2,3 (1 Department of Physics, Tohoku University, Aoba, Sendai, Japan; 2 ERATO Nuclear Spin Electronics Project, Aoba, Sendai, Japan; 3WPI-AIMR, Aoba, Sendai, Japan) Electrical control of coupling characteristics in vertically-stacked double-quantum-point-contact |
| TuP98 | T. Chwiej and B. Szafran (AGH University of Science and Technology, Faculty of Physics and Computer Science, al. Mickiewicza 30, 30-059 Kraków, Poland) Fractional conductance oscillations in the charged two-terminal semiconductor quantum ring |
| TuP99 | A. Jost1, V.K.Guduru1, S.Wenderich2,G. Koster2, M.Huijben2, M.K. Kruize2, G. Rijnders2, A. Brinkman2, H. Hilgenkamp2, A. McCollam1, U. Zeitler1, J.C.Maan1 (1High Field Magnet Laboratory, IMM, Radboud University Nijmegen, NL; 2MESA+ Institute for Nanotechnology, University of Twente, Enschede, NL) Thermoelectric power of the LaAlO3/SrTiO3 heterostructure |
| TuP100 | L. W. van Heeringen, G. de Wijs, A. McCollam, J. C. Maan and A. Fasolino (Institute for Molecules and Materials, Radboud University Nijmegen, The Netherlands) k·p subband structure of the LaAlO3/SrTiO3 interface |
| TuP101 | L.H. Dmowski 1, M. Baj 2, L. Kończewicz 3, A. Kwiatkowski 2, J. Przybytek 2, T. Suski 1, X. Q. Wang 4 (1 Institute of High Pressure Physics "Unipress", 01-142 Warsaw, Poland; 2 Faculty of Physics, Institute of Experimental Physics, University of Warsaw, Poland; 3 Laboratoire Charles Coulomb, CC074, Universite Montpellier 2, Pl. E. Bataillon, F-34095 Montpellier, France; 4 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China) High mobility 2D electrons in undoped InN epitaxial layers grown on N-polarity GaN buffer |
| TuP102 | W.Y.Mak1, F.Sfigakis1, H.E.Beere1, I. Farrer1, K. Das Gupta2 and D.A.Ritchie1 (1Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom; 2Indian Institute of Technology Bombay, Mumbai 400076, India) Effects of bias cooling and illumination on undoped GaAs/AlGaAs heterostructures |
| TuP103 | . Kubisa 1, K. Ryczko 1, I. Bisotto 2, C. Chaubet 3, A. Raymond 3 and W. Zawadzki 4 (1 Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Poland; 2 LNCMI, UPR 3228, CNRS-INSA-UJF-UPS, BP166, 38042 Grenoble, France; 3 L2C UMR 5221, CNRS-Universite Montpellier 2, Place E. Bataillon, 34090 Montpellier, France; 4 Institute of Physics, Polish Academy of Sciences, 02668 Warsaw, Poland) Two-electron states localized by charged acceptors in GaAs/GaAlAs quantum wells in ultra-quantum regime of magnetic fields |
| TuP104 | Hiroyuki Tamura, Toshiyuki Kobayashi and Tatsushi Akazaki (NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan) Phase evolution in the spin-incoherent Luttinger liquid |
| TuP105 | H. P. Hsu1, J. D. Wu2, Y. J. Lin2, Y. S. Huang2, Y. R. Lin3 and H. H. Lin3 (1 Department of Electronic Engineering, Ming Chi University of Technology, Taishan, Taipei 243, Taiwan; 2 Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan; 3 Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan) Optical characterization of GaAsSb/GaAs type-II quantum well with an adjacent InAs quantum-dot layer composite structures |
| TuP106 | A. F. Adiyatullin 1, 2, S. V. Shevtsov 1, 2, A. N. Minnullin 2 and V. S. Krivobok 1, 2 (1 Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia; 2 Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia) Properties of excitonic states in MOCVD-grown Zn(Cd)Se/ZnMgSSe quantum wells with spreaded heterointerfaces |
| TuP107 | Y. Nishihara1,2, K. Chida1,2, T. Arakawa1,2, S. Matsuo1,2, T. Tanaka1,2, K. Kobayashi2, T. Ono1, Y. Komijani3, T. Ihn3, K. Ensslin3, D. Reuter4 and A. D. Wieck4 (1 Institute for Chemical Research, Kyoto University; 2 Graduate School of Science, Osaka University; 3 Solid State Physics Laboratory, ETH; 4 Angewandte Festkörperphysik, Ruhr-Universität Bochum) Shot noise of a quantum point contact on a two-dimensional hole gas |
| TuP108 | Fabrizio Nichele, Atindra Nath Pal, Thomas Ihn , Klaus Ensslin, Christian Reichl and Werner Wegscheider (Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland) Spin splitting and effective masses in p-type GaAs two dimensional hole gases |
| TuP109 | Prabuddha B. Chakraborty1,2, Krzysztof Byczuk3 and Dieter Vollhardt2 (1 Indian Statistical Institute, Chennai Centre, SETS Campus, MGR Knowledge City, Taramani, Chennai 600113, India; 2 Theoretical Physics III, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-86135, Augsburg, Germany; 3Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681, Warszawa, Poland) Thermodynamic and transport properties of interacting electrons in two dimensions with diagonal and off-diagonal disorder |
| TuP110 | T. Kaur 1, L. Arrachea2 and N. Sandler 1,3 (1Department of Physics and Astronomy, Ohio University, Athens, OH - USA; 2 Departamento de Física, Univ. Nac. de Bs. As., Bs. As., Argentina; 3Dahlem Center for Complex Quantum Systems, Freie Universität, Berlin, Germany) Dimensionality crossover in pumping: from one to two-dimensional systems |
| TuP111 | V. Kotimäki1, E. Räsänen2;3, H. Hennig3 and E. J. Heller3 (1 NSC, Department of Physics, University of Jyväskylä, FI-40014 Jyväskylä, Finland; 2 Department of Physics, Tampere University of Technology, FI-33101 Tampere, Finland; 3 Physics Department, Harvard University, Cambridge, Massachusetts 02138, USA) Fractal dynamics in chaotic quantum transport |
| TuP112 | V. A. Kochelap1, V. V. Korotyeyev1, and L. Varani2 (1Institute for Semiconductor Physics, Pr. Nauki 41, Kiev 03028, Ukraine; 2Institut d'Electronique du Sud, CNRS UMR 5214, University Montpellier 2 France) Wave excitations of drifting two-dimensional electron gas under strong inelastic scattering |
| TuP113 | J. Wróbel1;2, M. Czapkiewicz1, P. Nowicki1, V. Kolkovsky1, T. Wojciechowski1, M. Wiater1, and T. Wojtowicz1 (1Institute of Physics, Polish Academy of Sciences, al Lotników 32/46, 02-668 Warszawa, Poland; 2Department of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów, Poland) Shot noise of CdTe/CdMgTe quantum point contact |
| TuP114 | C. J. Wesslén, E. Lindroth (Department of Physics, Stockholm University, AlbaNova, S-106 91 Stockholm, Sweden) Using the coupled cluster singles and doubles method to calculate many electron effects in 2D semiconductor structures |
| TuP115 | V.A.Petrov, A. V. Nikitin (Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, 125009, Russia) Electric-field control of penetration of quantum-mechanical current density under semi-infinite potential barrier at the interference of the electron waves in semiconductor 2D nanostructures |
| TuP116 | A.A. Zabolotnykh1;2 and V.A. Volkov2;1 (1Moscow Institute of Physics and Technology, Moscow Region 141700, Russia; 2V.A. Kotelnikov Institute of Radio-engineering and Electronics of RAS, Moscow 125009, Russia) Mechanism of giant microwave response of two-dimensional electron system near the second harmonic of the cyclotron resonance |
| TuP117 | Faina Lomakina1;2, Oleksiy Drachenko1, Harald Schneider1, Amalia Patane3, Mark Hopkinson4, and Manfred Helm1;2 (1Institute of Ion Beam Physics and Material Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany; 2Technische Universitat Dresden, 01062 Dresden, Germany; 3The University of Nottingham, Nottingham NG7 2RD, United Kingdom; 4University of Shefield, Shefield S3 3JD, United Kingdom) Investigation of the effective mass in GaAs1-yNy |
| TuP118 | Takanori Okayasu, Mokoto Kohda, and Junsaku Nitta (Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan) Magnetic focusing affected by an in-plane magnetic field in an InGaAs two-dimensional electron gas |
| TuP119 | Małgorzata Sznajder1 and Jacek A. Majewski 2 (1 Institute of Physics, University of Rzeszów, ul. Rejtana 16a, 35-310 Rzeszów, Poland; 2 Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warszawa, Poland) Morphology and charging of heteropolar SiC/AlN and SiC/GaN interfaces |
| TuP120 | Sagar Bhandari, Estelle Kalfon-Cohen, David Bell, Robert M. Westervelt (School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138) Imaging electrons in graphene nanostructures |
| TuP121 | T. Noda 1, M. Jo 1, T. Mano 1, T. Kawazu 1 and H. Sakaki 1,2 (1 National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047, Japan; 2 Toyota Technological Institute, Nagoya 468-8511, Japan) Photocurrent studies of GaAs/AlGaAs coupled quantum well solar cells |
| TuP122 | J. Puustinen1, A. Schramm1, P. Laukkanen2, L. Juhola1, M. Wu3, E. Luna3, M. Laitinen4, T. Sajavaara4 and M. Guina1 (1 Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere, Finland; 2 Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland; 3 Paul-Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany; 4 Department of Physics, P.O.Box 35, FI-40014 University of Jyväskylä, Finland) Structural properties of GaAsBi layers grown on GaAs by molecular beam epitaxy |
| TuP123 | S. Rathi1, Jinhyung Park1, Inyeal Lee1, Min Jin Kim2, Jeong Min Baik2, Kyung Soo Yi3 and Gil-Ho Kim1 (1Department of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea; 2School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-805, Korea; 3Department of Physics, Pusan National University, Busan 609-735, Republic of Korea) Annealing induced modulation of joule heating based metal-insulator transition point of VO2 nanobeams for smart nanodevice applications |
| TuP124 | N. J. Lambert1, M. Edwards1, A. A. Esmail1, F. Pollock2, B. W. Lovett3, A. J. Ferguson1 (1 Microelectronics Group, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge, CB3 0HE, UK; 2 Clarendon Laboratory, Parks Road Oxford, OX1 3PU, UK; 3 School of Engineering & Physical Sciences, Heriot-Watt University, Edinburgh, EH14 4AS, UK) A single-photon 'click' detector for microwave light |
| TuP125 | H. Al-Taie1;2, L. W. Smith1, J. P. Griffiths1, H. Beere1, G. A. C. Jones1, D.A. Ritchie1, C. G. Smith1 and M. J. Kelly1;2 (1Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, United Kingdom; 2Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom) Quantum Multiplexer: A novel device architecture for low-temperature measurements |
| TuP126 | L. W. Smith1, H. Al-Taie1;2, B. Xu1, J. P. Griffiths1, H. E. Beere1, G. A. C. Jones1, D. A. Ritchie1, C. G. Smith1, and M. J. Kelly1;2 (1Cavendish Laboratory, J. J. Thomson Avenue, Cambridge, CB3 0HE, United Kingdom; 2Centre for Advanced Photonics and Electronics, Department of Engineering, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom) Towards nano-structure circuits using split gates |
| TuP127 | S. Takahashi 1, A. Tandaechanurat 1, R. Igusa 2, Y. Ota 1, J. Tatebayashi 1, S. Iwamoto 1,2 and Y. Arakawa 1,2 (1 NanoQuine, University of Tokyo, 2 IIS, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan) Manipulation of circular polarization in a three-dimensional chiral photonic crystal |
| TuP128 | Michael E. Boiko, Michael D. Sharkov, Andrei M. Boiko and Alexander V. Bobyl (Ioffe Physico-Technical Institute, St. Petersburg, Russia) SAXS domain structure characterization of a GaAs-GaSe multilayer film using irradiation wavelengths near absorption edges |
| TuP129 | M. Szot, K. Dybko, P. Dziawa, L. Kowalczyk, V. Domukhovski, B. Taliashvili, A. Reszka, B. J. Kowalski, P. Dłużewski, M. Wiater, T. Wojtowicz, T. Story (Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland) Electric and thermoelectric properties of CdTe/PbTe epitaxial nanocomposite |
| TuP130 | Kuang-I Lin 1, I-Cheng Su 2, Jenn-Shyong Hwang 2 and Shangjr Gwo 3 (1 Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan; 2 Department of Physics, National Cheng Kung University, Tainan, Taiwan; 3 Department of Physics, National Tsing Hua University, Hsinchu, Taiwan) A semiconductor-like InN? |
| TuP131 | H. Sellier 1, P. Liu 1, B. Hackens 2, F. Martins 2, X. Wallart 3, L. Desplanque 3, V. Bayot 1,2, and S. Huant 1 (1 Institut Néel, CNRS & Université Joseph Fourier, BP 166, F-38042 Grenoble; 2 IMCN/NAPS, UCLouvain, 2 chemin du cyclotron, B-1348 Louvain-la-Neuve; 3 IEMN, UMR CNRS 8520, UST Lille, BP 60069, F-59652 Villeneuve d'Ascq) Coulomb blockade in 2DEG potential fluctuations revealed by SGM |
| TuP132 | Clemens Rössler, Tobias Krähenmann, Stephan Baer, Thomas Ihn, Klaus Ensslin, Christian Reichl, and Werner Wegscheider (Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland) Tunable Charge Detectors for Semiconductor Quantum Circuits |
| TuP133 | E. A. Chekhovich1, M. M. Glazov2,3, A. B. Krysa4, M. Hopkinson4, P. Senellart5, A. Lemaître5, M. S. Skolnick1 and A. I. Tartakovskii1 (1 Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, UK; 2 Ioffe Physical-Technical Institute of RAS, St Petersburg 194021, Russia; 3 Spin Optics Laboratory, St Petersburg State University, St Petersburg 198504, Russia; 4 Department of Electronic and Electrical Engineering, University of Sheffield, S1 3JD, UK; 5 Laboratoire de Photonique et de Nanostructures, Route de Nozay,Marcoussis, France) Hole hyperfine interaction: valence band orbital composition and its effect on hole spin qubit dephasing |
| TuP134 | P. Roulleau1, Y. Jompol1, Th. Jullien1, I. Farrer2 , D.A. Ritchie2, and D.C. Glattli1 (1 Nanoelectronics Group, Service de Physique de l'Etat Condensé, CEA Saclay, F-91191 Gif-sur-Yvette, France; 2 Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, UK) On-chip photon-assisted detection of the noise of a quantum point contact |